HM4614B N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
●Rds(on), Vgs@10V, lds@6.0A = 31 mΩ
●Rds(on), Vgs@4.5V, lds@5.0A= 45mΩ
■P-CH Vds=-40V
●Rds(on), Vgs@-10V, lds@-5.0A = 45mΩ
●Rds(on), Vgs@-4.5V, lds@-4.0A = 63mΩ
■Features
●Advanced trench process technology
●Density Cell Design For Ultra Low On-Resistance
●Improved Shoot-Through FOM
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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1.3 MB |
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