HM4614 N and P-Channel Enhancement Mode Power MOSFET

PublishTime：2021-07-06

●DESCRIPTION: The HM4614 uses advanced trench technology to provide excellent R-DS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
●GENERAL FEATURES:
■N-Channel
▲V-DS=40V,I-D=7A
▲R-DS(ON)<24mΩ @ V-GS=10V
▲R-DS(ON)<38mΩ @ V-GS=4.5V
■P-Channel
▲V-DS =-40V,I-D =-5A
▲R-DS(ON)<38mΩ @ V-GS=-10V
▲R-DS(ON)<50mΩ @ V-GS=-4.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package

Brand of Product：	H&M SEMI
Part#：	HM4614 More Part#
Product Category：	P-Channel Enhancement Mode Power MOSFET 、 N-Channel Enhancement Mode Power MOSFET More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOP-8
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/01
Version Number：
Data Encoding：
Data Size：	812 KB

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