HM4614 N and P-Channel Enhancement Mode Power MOSFET

PublishTime：2023-04-10

●Description
■The HM4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
●General Features
■N-Channel
▲VDS = 40V, ID =7A
▲RDS(ON) < 24mΩ @ VGS=10V
▲RDS(ON) < 38mΩ @ VGS=4.5V
■P-Channel
▲VDS = -40V, ID = -5A
▲RDS(ON) < 38mΩ @ VGS=-10V
▲RDS(ON) <50mΩ @ VGS=-4.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package

Brand of Product：	Hongmei Power Semiconductor
Part#：	HM4614 More Part#
Product Category：	N and P-Channel Enhancement Mode Power MOSFET More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOP-8
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2022/11/6
Version Number：
Data Encoding：
Data Size：	882 KB

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