CHA2595-98F 27.5-43.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC in bare die
This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band,low noise and adjustable gain performance.It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems.
It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography.ESD protection on DC/RF is included in the product.
● Features:
■ Broadband performances: 27.5-43.5GHz
■ Typical Linear Gain:19.5dB
■ Typical Noise Figure: 2dB
■ P-1dB: 11dBm
■ P-sat: 12dBm
■ OIP3: >20dBm
■ DC bias: Vd=3.3V@Id=61mA
■ Size : 2350 x 1150 μm
Low Noise Amplifier GaAs Monolithic Microwave IC in bare die |
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[ military ][ commercial communication ][ test instrumentation systems ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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17 Jun 21 |
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DSCHA25951168 |
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869 KB |
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