Thermal Management of eGaN® FETs
Enhancement-mode gallium nitride (eGaN，FETs offer high power-density capabilities with ultra-fast switching and low on-resistance, all in a compact form factor. However, the achievable power levels are limited by thermal overheating due to the extreme heat-flux densities. If not managed properly, the generated heat can result in excessive self-heating and elevated temperatures that compromise reliability and performance. For that reason, thermal management strategies are essential for high-power devices, and with chip-scale packaging of eGaN® FETs, many design advantages can be leveraged at the board-side and the backside (i.e., case) for improved heat dissipation.
This application note presents simple thermal management guidelines to enhance heat conductance from the GaN FETs and optimize thermal performance. In addition, a case study is presented with simple and effective thermal management solutions for the cooling of a development board with two active GaN FETs.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021 |
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AppNote 012 |
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2.4 MB |
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