UNPM2301 P-Channel MOSFET

2021-04-27
The UNPM2301 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit.
●Features:
■Trench Technology
■Supper high density cell design
■Excellent ON resistance
■Extremely Low Threshold Voltage
■Small package SOT-23
●Mechanical Data:
■Device: UNPM2301
■Package: SOT-23
■Material: Halogen free
■Packing: Tape & Reel
■Quantity per reel: 3,000 PCS
■Flammability Rating: UL 94V-0
■Reel size: 7 inch

UNSEMI

UNPM2301

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Part#

P-Channel MOSFETP-Channel enhancement MOS Field Effect Transistor

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DC-DC conversion ]power switch ]charging circuit ]Load Switching for portable device ]

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Datasheet

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Please see the document for details

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SOT-23

English Chinese Chinese and English Japanese

Feb 23, 2021

Revision Feb 23, 2021

1.4 MB

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