PM2301E
■P-channel Enhancement Mode Power MOSFET
●FEATURES
■VDS=-20V,ID=-2.5A
▲RDS(ON)<160mΩ@VGS=-4. 5V
▲RDS(ON)<230mΩ@VGS=-2. 5V
■Advanced Trench Technology
■Excellent RDS(ON) and Low Gate Charge
■Lead free product is acquired
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[ Load Switch ][ Power Management ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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11-Jan-23 |
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Rev 1.1 |
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620 KB |
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