UNPM2301 P-Channel MOSFET DATA SHEET
■ Description
● The UNPM2301 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit.
■ Feature
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● Small package SOT-23
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P-Channel MOSFET 、 P-Channel enhancement MOS Field Effect Transistor |
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[ DC/DC Converter ][ Portable Devices ][ Load Switching ][ Power Switching ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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December 18,2018 |
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Revision December 18,2018 |
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1.2 MB |
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