Reliability Qualification Report for DDRIIIL SDRAM with Pb/Halogen Free (512M×8, 25nm SDRAM AS4C512M8D3LC-12BCN)
In order to meet the most stringent market demands for high quality and reliability semiconductor components, Alliance Memorymaintains a strict reliability program in all products. The purpose of this report is to give an overview of the reliability status of AS4C512M8D3LC-12BCN. Accelerated tests are performed on product, and then the results are extrapolated to standard operating conditions in order to calculate and estimate the component's failure rate.
2. PRODUCT INFORMATION:
The AS4C512M8D3LC-12BCN is a 512M*8 bits high-speed CMOS Double Data Rate Three Synchronous Dynamic Random Access Memory (DDRIIIL SDRAM) operating from a single 1.283 to 1.45 Volt power supply. By employing some new CMOS circuit design technologies and the advanced DRAM process technologies, the AS4C512M8D3LC-12BCN is well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. The AS4C512M8D3LC-12BCN is packaged in a standard 78ball, plastic 7.5x10.6mm wBGA.
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Double Data Rate Three Synchronous Dynamic Random Access Memory 、 DDRIIIL SDRAM 、 SDRAM |
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Test Report |
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Please see the document for details |
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wBGA |
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English Chinese Chinese and English Japanese |
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March16, 2020 |
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802 KB |
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