EiceDRIVER™ Compact High voltage gate driver IC 2EDL family 600 V half bridge gate drive IC
blocking voltage of +600V in half bridge configurations. Based on the used SOI-technology there is an excellent
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic
latch up may occur at all temperature and voltage conditions.
The two independent drivers outputs are controlled at the low-side using two different CMOS resp. LSTTL
compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis
characteristic which are optimised either for IGBT or MOSFET.
Those parts, which are designed for IGBT have asymmetric undervoltage lockout levels, which support strongly
the integrated ultrafast bootstrap diode. Additionally, the offline gate clamping function provides an inherent
protection of the transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VDD.
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2EDL05I06PF 、 2EDL05I06PJ 、 2EDL05I06BF 、 2EDL05N06PF 、 2EDL05N06PJ 、 2EDL |
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[ Home appliances ][ Consumer electronics ][ Fans, pumps ][ General purpose drives ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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01.06.2016 |
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Revision 2.6 |
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1.5 MB |
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