UF3SC065030D8S 650V-34mΩ SiC FET
configuration, in which a normally-on SiC JFET is co-packaged with a
Si MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the DFN8X8-4L package, this device exhibits
ultra-low gate charge and exceptional reverse recovery
characteristics, making it ideal for switching inductive loads , and any
application requiring standard gate drive.
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[ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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ESD(HBM class 2) 、 HALOGEN FREE 、 LEAD FREE 、 RoHS |
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Please see the document for details |
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DFN8X8-4L |
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English Chinese Chinese and English Japanese |
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October 2019 |
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Rev. A |
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1.1 MB |
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