IDT71V65603/Z IDT71V65803/Z 256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs DATA SHEET

2020-05-13
The IDT71V65603/5803 are 3.3V high-speed 9,437,184-bit

(9 Megabit) synchronous SRAMS. They are designed to eliminate dead bus

cycles when turning the bus around between reads and writes, or writes and

reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock

cycle, and two cycles later the associated data cycle occurs, be it read or write.

The IDT71V65603/5803 contain data I/O, address and control signal

registers. Output enable is the only asynchronous signal and can be used

to disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V65603/5803

to be suspended as long as necessary. All synchronous inputs are ignored

when (CEN) is high and the internal device registers will hold their previous

values.

There are three chip enable pins (CE1, CE2, CE2) that allow the user

to deselect the device when desired. If any one of these three are not

asserted when ADV/LD is low, no new memory operation can be

initiated. However, any pending data transfers (reads or writes) will be

completed. The data bus will tri-state two cycles after chip is deselected

or a write is initiated.

The IDT71V65603/5803 have an on-chip burst counter. In the burst

mode, the IDT71V65603/5803 can provide four cycles of data for a

single address presented to the SRAM. The order of the burst

sequence is defined by the LBO input pin. The LBO pin selects

between linear and interleaved burst sequence. The ADV/LD signal is

used to load a new external address (ADV/LD = LOW) or increment

the internal burst counter (ADV/LD = HIGH).

The IDT71V65603/5803 SRAM utilize IDT's latest high-performance

CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and 165 fine pitch ball grid array (fBGA) .

IDT

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512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs256K x 36 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

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Datasheet

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Commercial 、 Industrial

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TQFP;BGA;fBGA

English Chinese Chinese and English Japanese

OCTOBER 2008

REV 02

DSC-5304/08

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