SPM1001 THREE-PHASEIGBT BRIDGE with SiC DIODES,BRAKE MOSFET and INTEGRATED BRAKE RESISTOR
●600 VOLT,50 AMP,THREE PHASE IGBT BRIDGE
●SILICON CARBIDE (SiC)20A 600V ANTI PARALLEL DIODES ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT
●600V,22A BRAKE MOSFET
●INTEGRATED G-E AND G-S RESISTORS FOR HIGHER ESD IMMUNITY
●INTEGRATED BRAKE RESISTOR WITH DIRECT HEAT TRANSFER TO BASE
●RTD TO MONITOR MODULE TEMPERATURE
●AISiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY
●LOW PROFILE LIGHT WEIGHT PACKAGE
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/06/23 |
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Rev. - |
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404 KB |
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