The Difference Between GaN and SiC Transistors
GaN transistors found an early niche in the radio frequency (RF) power field. The nature of the materials led to the development of a field effect transistor (FET) of the depletion mode type.Called a pseudomorphic high electron mobility transistor (pHEMT), depletion (or D mode) FETs are naturally “on” devices; with no gate control input, a natural conduction channel exists. Gate input signals control the channel conduction and turn the device on and off.
SiC transistors are natural E−mode MOSFETs. These devices can switch at frequencies ashigh as 1 MHz at voltage and current levels much higher than silicon MOSFETs. Maximum drain−source voltage is up to about 1,800 V with a current capability to 100 amperes. In addition,the on−resistance of SiC devices is much lower than that of silicon MOSFETs, making the mmore efficient in all switching power applications (SMPS designs). One key disadvantage is they require a higher gate drive voltage than other MOSFETs, although this is changing as designs improve.
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Please see the document for details |
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August, 2019 |
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Rev. 1 |
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TND6299/D |
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979 KB |
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