© Semiconductor Components Industries, LLC, 2019
August, 2019 − Rev. 1
1 Publication Order Number:
TND6299/D
The Difference Between GaN and SiC
Transistors
TND6299/D
Rev. 1, AUGUST − 2019
www.onsemi.com
2
The Difference Between GaN and SiC Transistors
For decades, silicon has dominated the transistor world. But that has been gradually
changing. Compound semiconductors made of two or three materials have been developed and
offer unique benefits and superior characteristics. For example, compound semiconductors
gave us the light emitting diode (LED). One type is made up of a mix of Gallium Arsenide (GaAs)
and Gallium Arsenide and Phosphorus (GaAsP). Others use indium and phosphorous.
The problem is that compound semiconductors are harder to make and more expensive. Yet,
they offer significant benefits over silicon. New more demanding applications such as
automotive electrical systems and electric vehicles (EVs) are finding that compound
semiconductors better meet their stringent specifications.
Two such compound semiconductor devices that have emerged as solutions are Gallium
Nitride (GaN) and Silicon Carbide (SiC) power transistors. These devices compete with the
long−lived silicon power LDMOS MOSFETs and the super−junction MOSFETs. The GaN and
SiC devices are similar in some ways but also have significant differences. This article
compares the two and offers up some facts to help you make a decision for your next design.
Figure 1. Power Capability vs. Switching Frequency for Popular High Voltage, High
Current Transistors and Other Devices is Shown, as well as the Primary Applications