SSM6L56FE MOSFETsSilicon P-/N-Channel MOS
●Features
■1.5-V drive
■Low drain-source on-resistance
▲Q1 N-channel:
◆R-DS(ON) = 235 mΩ (max) (@V-GS = 4.5 V, I-D = 800 mA)
◆R-DS(ON) = 300 mΩ (max) (@V-GS = 2.5 V, I-D = 600 mA)
◆R-DS(ON) = 480 mΩ (max) (@V-GS = 1.8 V, I-D = 200 mA)
◆R-DS(ON) = 840 mΩ (max) (@V-GS = 1.5 V, I-D = 50 mA)
▲Q2 P-channel:
◆R-DS(ON) = 390 mΩ (max) (@V-GS = -4.5 V, I-D = -800 mA)
◆R-DS(ON) = 480 mΩ (max) (@V-GS = -2.5 V, I-D = -500 mA)
◆R-DS(ON) = 660 mΩ (max) (@V-GS = -1.8 V, I-D = -200 mA)
◆R-DS(ON) = 900 mΩ (max) (@V-GS = -1.5 V, I-D = -100 mA)
◆R-DS(ON) = 4000 mΩ (max) (@V-GS = -1.2 V, I-D = -10 mA)
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Datasheet |
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Please see the document for details |
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ES6 |
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English Chinese Chinese and English Japanese |
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2019-08-01 |
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Rev.1.0 |
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580 KB |
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