SSM6L807R MOSFETs Silicon P-/N-Channel MOS
◆Features
■Low drain-source on-resistance
●Q1 N-channel:
▲R-DS(ON) = 39.1 mΩ (max) (@V-GS = 4.5 V)
▲R-DS(ON) = 53 mΩ (max) (@V-GS = 2.5 V)
▲R-DS(ON) = 82 mΩ (max) (@V-GS = 1.8 V)
●Q2 P-channel:
▲R-DS(ON) = 45 mΩ (max) (@V-GS = -10 V)
▲R-DS(ON) = 56 mΩ (max) (@V-GS = -4.5 V)
▲R-DS(ON) = 76 mΩ (max) (@V-GS = -2.5 V)
▲R-DS(ON) = 157 mΩ (max) (@V-GS = -1.8 V)
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Silicon P-Channel MOS MOSFETs 、 Silicon N-Channel MOS MOSFETs |
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Datasheet |
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Please see the document for details |
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TSOP6F |
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English Chinese Chinese and English Japanese |
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2019-01-31 |
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Rev.3.0 |
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753 KB |
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