TPC8407 MOSFETs Silicon P-/N-Channel MOS (U-MOSVI/U-MOSVII-H)
●Features
■Small footprint due to a small and thin package
■High speed switching
■Low drain-source on-resistance
▲P-channel RDS(ON)=18 m(typ.)(VGS =-10 V)
▲N-channel RDS(ON)=14 m (typ.)(VGS =10 V)
■Low leakage current
▲P-channel IDSS =-10 HA (VDS=-30 V),
▲N-channel IDSS =10 HA (VDS =30 V)
■Enhancement mode
▲P-channel Vth =-0.8 to-2.0 V (VDS =-10 V, ID =0.2 mA)
▲N-channel Vth 1.3 to 2.3 V (VDS =10 V, ID =0.1 mA)
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[ Motor Drivers ][ CCFL Inverters ][ Mobile Equipments ] |
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Datasheet |
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Please see the document for details |
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SOP-8;2-5R1S |
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English Chinese Chinese and English Japanese |
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2014-01-07 |
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Rev.2.0 |
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620 KB |
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