TPCP8601 Transistor Silicon PNP Epitaxial Type (PCT Process) data sheet
●High DC current gain: h-FE = 200 to 500 (I-C = −0.6 A)
●Low collector-emitter saturation: V-CE (sat) = −0.19 V (max)
●High-speed switching: t-f = 35 ns (typ.)
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[ DC-DC Converter ][ Strobo Flash ] |
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Datasheet |
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Please see the document for details |
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2-3V1A;2-3S1A |
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English Chinese Chinese and English Japanese |
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2013-11-01 |
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381 KB |
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