TLP785, TLP785F Photocoupler IRED & Photo−Transistor data sheet

2022-07-13

■The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5000 Vrms(min)).
■TLP785F is a lead forming type for the long creepage surface mounting of TLP785.
▲TLP785: 7.62 mm pitch type DIP4
▲TLP785F: 10.16 mm pitch type DIP4
▲Collector-emitter voltage: 80 V (min)
▲Current transfer ratio: 50% (min); Rank GB: 100% (min)
▲Isolation voltage: 5000 Vrms (min)
▲UL-recognized : UL 1577, File No.E67349
▲cUL-recognized :CSA Component Acceptance Service No.5A, File No.E67349
▲VDE-approved : EN 60747-5-5
▲CQC-approved: GB4943.1, GB8898 China Factory
▲SEMKO-approved : EN 62368-1

TOSHIBA

TLP785TLP785FTLP785 (GB)TLP785(LF6)TLP785F(LF7)TLP785 (BL−TP6FTLP785F (BL−TP7TLP785(D4-GR-LF6TLPxxxTLPxxxF

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PhotocouplerIRED & Photo−Transistor

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DIP4LF7;11-5L1;11-5L102;DIP4;DIP;11-5L106;11-5L107;DIP4LF6

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2019-03-11

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