TPN2R503NC MOSFETs Silicon N-channel MOS (U-MOSⅧ)
●Features
■Small footprint due to a small and thin package
■Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)
■Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
■Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TSON;2-3X1S |
|
|
English Chinese Chinese and English Japanese |
|
|
2016-05-13 |
|
|
Rev.5.0 |
|
|
|
|
|
410 KB |
- +1 Like
- Add to Favorites
Recommend
- The Difference between SIM Card and SD Card
- Acroview universal programmer heavyweight IC programming of the 32-bit microcontroller N32G4FRREL7
- Small Size PCB Bluetooth Module Development
- Bluetooth LE 5.0 module: Advantages and Applications
- Sekorm - Fujistu distributor in China
- Renesas Accelerate Battery Maintenance-Free Product Developments with RE Family Partner Solutions
- Acroview Programmer AP8000 Support the Programming of TI Texas Instruments Fuel Gauge BQ27500DRZR-V130
- What Impact Does 5g Bring to Connector Manufacturers?
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
