TPCP8405 MOSFETs Silicon P-/N-Channel MOS (U-MOSⅥ/U-MOSⅥ-H)
●Features
■Low drain-source on-resistance
▲P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V),
▲N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)
■Low leakage current
▲P-channel IDSS = -10 μA (VDS = -30 V),
▲N-channel IDSS = 10 μA (VDS = 30 V)
■Enhancement mode
▲P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA),
▲N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
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Datasheet |
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Please see the document for details |
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PS-8;2-3V1S |
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English Chinese Chinese and English Japanese |
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2015-10-21 |
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Rev.3.0 |
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596 KB |
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