TPCP8407 MOSFETsSilicon P-/N-Channel MOS (U-MOS Ⅵ/U-MOS Ⅳ) data sheet
●Features
■AEC-Q101 qualified
■Small, thin package
■Low gate charge
▲N-channe MOSFET: QSW = 4.7 nC (typ.)
▲P-channel MOSFET: QSW = 5.5 nC (typ.)
■Low drain-source on-resistance
▲N-channe MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V)
▲P-channe MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V)
■Low leakage current
▲N-channe MOSFET: IDSS = 10 μA (max) (VDS = 40 V)
▲P-channe MOSFET: IDSS = -10 μA (max) (VDS = -40 V)
■Enhancement mode
▲N-channe MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA)
▲P-channe MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
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Datasheet |
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Please see the document for details |
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PS-8;2-3V1S |
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English Chinese Chinese and English Japanese |
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2016-02-24 |
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Rev.4.0 |
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573 KB |
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