GB02SLT12-252 Silicon Carbide Schottky Diode 1200V 2A SiC Schottky MPS™ Diode
●Features
■High Avalanche (UIS) Capability
■Enhanced Surge Current Capability
■Superior Figure of Merit QC/IF
■Low Thermal Resistance
■175 °C Maximum Operating Temperature
■Temperature Independent Switching Behavior
■Positive Temperature Coefficient of VF
■Extremely Fast Switching Speeds
●Advantages
■Low Standby Power Losses
■Improved Circuit Efficiency (Lower Overall Cost)
■Low Switching Losses
■Ease of Paralleling without Thermal Runaway
■Smaller Heat Sink Requirements
■Low Reverse Recovery Current
■Low Device Capacitance
■Low Reverse Leakage Current
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[ Boost Diode ][ Switched Mode Power Supply ][ Uninterruptible Power Supply ][ Freewheeling Diode ][ Anti-parallel Diode ][ Solar Inverters ][ Wind Energy Converters ][ Electric Vehicles ][ DC Fast Charging ][ Induction Heating ][ Welding ] |
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Datasheet |
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Please see the document for details |
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TO-252-2 |
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English Chinese Chinese and English Japanese |
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April 2019 |
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Rev1.3 |
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437 KB |
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