GB02SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Power Schottky Diode
●Features
■High Avalanche (UIS) Capability
■Enhanced Surge Current Capability
■175 °C Maximum Operating Temperature
■Temperature Independent Switching Behavior
■Positive Temperature Coefficient Of VF
■Extremely Fast Switching Speeds
■Superior Figure of Merit QC/IF
●Advantages
■Low Standby Power Losses
■Improved Circuit Efficiency (Lower Overall Cost)
■Low Switching Losses
■Ease of Paralleling Devices without Thermal Runaway
■Smaller Heat Sink Requirements
■Low Reverse Recovery Current
■Low Device Capacitance
■Low Reverse Leakage Current at Operating Temperature
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[ Power Factor Correction ][ Switched-Mode Power Supply ][ Solar Inverters ][ Wind Turbine Inverters ][ Induction Heating ][ Uninterruptible Power Supply ][ High Voltage Multipliers ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L |
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English Chinese Chinese and English Japanese |
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Feb 2018 |
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Rev 1.1 |
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2.4 MB |
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