AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor
■Description:
●The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.The devices are unconnected, allowing flexibility in design.The pin-out is convenient for cascode amplifier designs.The SOT-363 package is an industry standard plastic surface mount package.
●The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks.The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast,with moderate power,low noise resistance,and low operating currents.
●Optimized performance at 2.7 V makes this device ideal for use in 900 MHz,1.8 GHz,and 2.4 GHz battery operated systems as an LNA, gain stage,buffer,oscillator,or active mixer.Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V,5 mA bias, with noise performance being relatively insensitive to input match.High gain capability at 1 V,1 mA makes this device a good fit for 900 MHz pager ap-plications.Voltage breakdowns are high enough for use at 5 volts.
●The AT-3 series bipolar transistors are fabricated using an optimized version of Avago's 10 GHz ft,30 GHz fmaxSelf-Aligned-Transistor (SAT) process.The die are nitride passivated for surface protection.Excellent device unifor-mity, performance and reliability are produced by the use of ion-implantation,self-alignment techniques,and gold metallization in the fabrication of these devices.
■Features:
●High Performance Bipolar Transistor Optimized for Low Current,Low Voltage Operation
●900 MHz Performance:1.1 dB NF,14.5 dB GA
●Characterized for End-of-Life Battery Use(2.7 V)
●SOT-363(SC-70)Plastic Package
●Tape-and-Reel Packaging Option Available
●Lead-free
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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June 9, 2009 |
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AV02-1456EN |
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412 KB |
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