AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor

2022-10-29

●Description
■Avago's AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
■The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.
■Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.
■The AT-3 series bipolar transistors are fabricated using an optimized version of Avago's 10 GHz f-T, 30 GHz f-max Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
●Features
■High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
■900 MHz Performance:
▲AT-31011: 0.9 dB NF, 13 dB G-A
▲AT-31033: 0.9 dB NF, 11 dB G-A
■Characterized for End-Of-Life Battery Use (2.7 V)
■SOT-143 SMT Plastic Package
■Tape-And-Reel Packaging Option Available
■Lead-free

AVAGO

AT-31011AT-31033

More

Part#

High Performance NPN Silicon Bipolar Transistor

More

battery powered applications ]wireless markets ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

June 9, 2009

AV02-0795EN

563 KB

- The full preview is over. If you want to read the whole 10 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: