AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors

2022-10-29

●Description
■Avago's AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum f-T at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.
■The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents.
■Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at a 2.7 V, 1 mA bias. Voltage breakdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.
■The AT-3 series bipolar transistors are fabricated using an optimized version of Avago’s 10 GHz f-T, 30 GHz f-MAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
●Features
■High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
■900 MHz Performance:
▲AT-30511: 1.1 dB NF, 16 dB G-A
▲AT-30533: 1.1 dB NF, 13 dB G-A
■Characterized for End-Of-Life Battery Use (2.7 V)
■SOT-23 and SOT-143 SMT Plastic Packages
■Tape-And-Reel Packaging Option Available
■Lead-free

AVAGO

AT-30511AT-30533

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High Performance NPN Silicon Bipolar Transistors

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battery powered applications ]wireless markets ]

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June 9, 2009

AV02-0794EN

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