Reliability Qualification Report for SDR SDRAM with Pb/Halogen Free (32M8, 38nm SDRAM AS4C32M8SA-6TIN)
■INTRODUCTION
●In order to meet the most stringent market demands for high quality and reliability semiconductor components, Alliance maintains a strict reliability program in all products. The purpose of this report is to give an overview of the reliability status of AS4C32M8SA-6TIN. Accelerated tests are performed on product, and then the results are extrapolated to standard operating conditions in order to calculate and estimate the component's failure rate.
■PRODUCT INFORMATION
●The AS4C32M8SA-6TIN is an 8M*32 bits high-speed CMOS Single Data Rate Syn-chronous Dynamic Random Access Memory (SDR SDRAM) operating from a single 3.0 to 3.6 Volt power supply. By employing some new CMOS circuit design technologies and the advanced DRAM process technologies, the AAS4C32M8SA-6TIN is well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. The AS4C32M8SA-6TIN is packaged in a standard 90ball, plastic 8x13mm FBGA.
8M*32 bits high-speed CMOS Single Data Rate Syn-chronous Dynamic Random Access Memory 、 SDR SDRAM |
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Test Report |
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Please see the document for details |
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TSOPII |
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English Chinese Chinese and English Japanese |
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Jun 20, 2017 |
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3.1 MB |
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