Reliability Qualification Report for DDRIIIL SDRAM with Pb/Halogen Free (64M×16, 38nm SDRAM AS4C64M16D3LB-12BIN)
●INTRODUCTION
■In order to meet the most stringent market demands for high quality and reliability semiconductor components, Alliance maintains a strict reliability program in all products. The purpose of this report is to give an overview of the reliability sta-tus of AS4C64M16D3LB-12BIN. Accelerated tests are performed on product, and then the results are extrapolated to standard operating conditions in order to calculate and estimate the component's failure rate.
●PRODUCT INFORMATION
■The AS4C64M16D3LB-12BIN is a 64M*16 bits high-speed CMOS Double Data Rate Three Synchronous Dynamic Random Access Memory (DDRIIIL SDRAM) operat-ing from a single 1.283 to 1.45 Volt power supply. By employing some new CMOS circuit design technologies and the advanced DRAM process technologies, the AS4C64M16D3LB-12BIN is well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. The AS4C64M16D3LB-12BIN is packaged in a standard 96ball, plastic 9x13mm wBGA.
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64M*16 bits high-speed CMOS Double Data Rate Three Synchronous Dynamic Random Access Memory 、 DDRIIIL SDRAM |
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Test Report |
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Please see the document for details |
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BGA |
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English Chinese Chinese and English Japanese |
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March 1, 2019 |
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3.3 MB |
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