CS4N10 A23-G Silicon N-Channel Power MOSFET
●General Description：
■CS4N10 A23-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the RoHS standard..
●Features：
■Fast Switching
■LowON Resistance(Rdson≤0.2Ω)
■Low Gate Charge (Typical Data:8.5nC)
■Low Reverse transfer capacitances(Typical:7.38pF)
■100%Single Pulse avalanche energy Test
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[ Power switch circuit ][ adaptor ][ charger ] |
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Datasheet |
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Please see the document for details |
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SOT-223 |
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English Chinese Chinese and English Japanese |
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2015 |
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V01 |
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394 KB |
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