CS4N10 AE-1 Silicon N-Channel Power MOSFET
●General Description:
■CS4N10 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.. The package form is SOP8, which accords with the RoHS standard.
●Features:
■Fast Switching
■Low ON Resistance(Rdson≤150 mΩ)
■Low Gate Charge
■Low Reverse transfer capacitances
■100% Single Pulse avalanche energy Test
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silicon N-channel Enhanced VDMOSFETs 、 Silicon N-Channel Power MOSFET |
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[ Power switch circuit ][ adaptor ][ charger ] |
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Datasheet |
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Please see the document for details |
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SOP8;SOP-8 |
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English Chinese Chinese and English Japanese |
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2018 |
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V01 |
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569 KB |
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