CS5N10 A23-G Silicon N-Channel Power MOSFET

PublishTime：2023-10-09

●CS5N10 A23-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is SOT-223, which accords with the RoHS standard.
●Features：
■Fast Switching
■Low ON Resistance(Rdson≤70mΩ)
■Low Gate Charge
■Low Reverse transfer capacitances
■100% Single Pulse avalanche energy Test
■Halogen Free
●Applications：
■Power switch circuit of adaptor and charger.

Brand of Product：	CR Micro
Part#：	CS5N10 A23-G More Part#
Product Category：	Silicon N-Channel Power MOSFET 、 silicon N-channel Enhanced VDMOSFETs More
Application：	[ Power switch circuit ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-223
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2020/11/13
Version Number：	2020V01
Data Encoding：
Data Size：	782 KB

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