Littelfuse‘s New 1700V, 750mΩ Silicon Carbide (SiC) MOSFETs in TO263-7L
Littelfuse's new 1700V, 750mΩ Silicon Carbide (SiC) MOSFETs are
presented in a TO-263-7L package. The separated source pin
significantly reduces the parasitic source inductance path to the driver,
which helps to reduce switching times and switching losses in the
application. The maximum operating junction temperature is 175 °C
thereby improving the system reliability. These MOSFETs are ideal for
high-frequency applications in which high efficiency is desired.
Benefits
▪ Optimized for high-frequency, high-efficiency applications
▪ Low-losses
▪ Separated source pin reduces parasitic source inductance
Features
▪ Extremely low gate charge and output capacitance, low gate resistance
▪ Low on-resistance
▪ Optimized package with separated driver source pin
Markets/Applications
▪ High-frequency application
▪ Solar inverter
▪ Switched Mode Power Supplies
▪ UPS
▪ Motor drive
▪ High Voltage DC-DC converter
▪ Battery charger
▪ Induction heating
- 【Datasheet】LSIC1MO170T0750 1700 V, 750mOhm N-Channel SiC MOSFET Data sheet
- 【Datasheet】LSIC1MO170T0750 1700 V, 750 mOhm N-Channel SiC MOSFET
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