The 60V/60A N-channel MOSFET SL60N06 with Superior High-frequency Characteristics, Enabling Rapid Switching and Precise Control Within the Microwave Frequency Range
SLKOR SL60N06 is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 60A. It is renowned for its low on-resistance (11.5mΩ@10V,30A) and relatively low threshold voltage (4V@250μA). With the rapid advancement of microwave technology, the application of high-frequency circuits in fields such as radar, communication, and satellite navigation is becoming increasingly widespread. These attributes have garnered significant attention for the SL60N06 as a key component in high-frequency circuits, thanks to its excellent performance and reliability.
Slkor Medium Voltage MOSFET SL60N06 product photo
Slkor Medium Voltage MOSFET SL60N06 specification
The Slkor SL60N06 boasts a continuous drain current rating of 60A, capable of handling high-power loads. Its MOSFET design offers superior high-frequency characteristics, enabling rapid switching and precise control within the microwave frequency range. With excellent high-frequency response capabilities, it meets the demands for processing and transmitting high-frequency signals. The low RDS(on) indicates its low-loss characteristics, particularly beneficial at microwave frequencies, where it helps reduce energy consumption in high-frequency circuits, thereby enhancing overall efficiency. It also aids in minimizing signal attenuation during transmission, maintaining signal integrity and stability. High-frequency circuits often operate under conditions of high power density and elevated temperatures. The MOSFET employs a specialized packaging structure, facilitating efficient heat dissipation to ensure stable operation even in high-temperature environments.
Parameters of Slkor Medium Voltage MOSFET SL60N06
The Slkor Medium Voltage MOSFET SL60N06 incorporates key technologies in microwave high-frequency circuits, including precision matching, packaging, and driver circuit design. In microwave circuits, the matching between components is crucial for circuit performance. This device requires effective matching with other components to ensure circuit stability and performance. Therefore, high-precision matching techniques are employed in the design and manufacturing process to guarantee impedance and phase matching between the MOSFET and other components. Additionally, advanced packaging techniques are utilized to enhance microwave performance and reliability effectively.
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