5V Parallel NOR Flash from Alliance Memory was Available in Densities from 1M to 16M and Offer Access Times of 55ns
Alliance Memory bolsters its product offering with a line of 5V parallel NOR flash memory products in boot and uniform sectored architectures. Available in densities from 1M to 16M, the devices offer access times of 55ns to enable fast, low-latency read speeds, allowing for both direct code execution and data storage in a single memory product.
Part Numbers: AS29CF010-55CCIN, AS29CF040-55CCIN,AS29CF800T-55TIN,AS29CF800B-55TIN,AS29CF160T-55TIN, and AS29CF160B-55TIN.
Key Specifications and Benefits:
5V VCC
Offered in boot and uniform sectored architectures
Boot devices are available in top or bottom block configurations
Densities from 1M to 16M
Fast access times of 55ns
Reliable, long-term performance for embedded systems
Minimum of 100,000 program/erase cycles per sector
20-year data retention at +125℃
Flexible sector architectures
Embedded algorithms for automatic write/erase and verification
Operate over an industrial temperature range of -40℃ to +85℃
Current:
20mA typical active read currents
30mA typical program/erase currents
Standby mode reduces power consumption to as low as 1μA
Packages:
32-pin PLCC (uniform sector devices)
48-pin TSOP I (boot devices)
Programmed in standard EPROM programmers
Lead (Pb)-free and RoHS 2.0 compliant
Target Applications:
Digital still cameras (DSC and DSLR), networking routers and switches, home gateways, set-top boxes (STB), automotive infotainment systems, industrial robotics, and medical electronics
The Context: With their fast boot times, Alliance Memory’s 5V parallel NOR flash solutions are ideal for high-performance and process-intensive applications. The devices’ flexible sector architectures allow any combination of sectors to be erased and reprogrammed without affecting the content of other sectors — ensured by a hardware protection feature that prevents inadvertent program or erase operations. An Embedded Program algorithm automatically writes and verifies bytes at specified addresses, while an Embedded Erase algorithm automatically erases and verifies the entire chip or designated sectors.
Availability: Samples of the 5V parallel NOR Flash memory products are available now.
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