UTT10N10 10A, 100V N-CHANNEL MOSFET
■DESCRIPTION
●The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.
■FEATURES
●RDS(on) < 143 mΩ @ VGS =10V, ID=6.4A
●RDS(on) < 156 mΩ @ VGS =10V, ID=6.4A
●High Switching Speed
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UTT10N10 、 UTT10N10L-TM3-T 、 UTT10N10G-TM3-T 、 UTT10N10L-TN3-R 、 UTT10N10G-TN3-R 、 UTT10N10L-K08-3030-R 、 UTT10N10G-K08-3030-R 、 UTT10N10L-K08-5060-R 、 UTT10N10G-K08-5060-R |
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N-CHANNEL MOSFET 、 N-channel enhancement mode power MOSFET 、 Power MOSFET |
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Datasheet |
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Please see the document for details |
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TO-252;DFN3030-8;DFN5060-8 |
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English Chinese Chinese and English Japanese |
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2018/06/24 |
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R502-714.F |
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696 KB |
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