UTT10NP06 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

2022-02-22
● DESCRIPTION :
■ The UTC UTT10NP06 incorporates a N-channel MOSFET and a P-channel MOSFET,it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness.
■ The UTC UTT10NP06 is universally applied in low voltage applications.
● FEATURES :
■ N-CHANNEL R-DS(on) ≤ 56 mΩ @ V-GS =10V, I-D =5.0A; R-DS(on) ≤ 64 mΩ @ V-GS =4.5V, I-D =5.0A
■P-CHANNEL R-DS(on) ≤ 68 mΩ @ V-GS =-10V, I-D =-5.0A; R-DS(on) ≤ 88 mΩ @ V-GS =-4.5V, I-D =-5.0A
■ High switching speed SOP-8TO-252-4PDFN5×61;1TO-220-51

UTC

UTT10NP06UTT10NP06L-TN4-RUTT10NP06G-S08-RUTT10NP06G-TN4-RUTT10NP06L-P5060-RUTT10NP06G-P5060-RUTT10NP06L-S08-RUTT10NP06L-TA5-TUTT10NP06G-TA5-T

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Part#

Power MOSFET

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Datasheet

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PDFN5×6;SOP-8;TO-252-4;TO-220-5

English Chinese Chinese and English Japanese

2021/9/30

QW-R502-773.L

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