GB02SLT12-214 Silicon Carbide Power Schottky Diode

2022-09-23

●Features
■Industry's leading low leakage currents
■175 °C maximum operating temperature
■Temperature independent switching behavior
■Superior surge current capability
■Positive temperature coefficient of VF
■Extremely fast switching speeds
■Superior figure of merit QC/IF
●Advantages
■Low standby power losses
■Improved circuit efficiency (Lower overall cost)
■Low switching losses
■Ease of paralleling devices without thermal runaway
■Smaller heat sink requirements
■Low reverse recovery current
■Low device capacitance
■Low reverse leakage current at operating temperature

GENESIC SEMICONDUCTOR

GB02SLT12-214

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Silicon Carbide Power Schottky Diode

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Power Factor Correction ]Switched-Mode Power Supply ]Solar Inverters ]Wind Turbine Inverters ]Induction Heating ]Uninterruptible Power Supply ]High Voltage Multipliers ]

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Datasheet

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Please see the document for details

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SMB /DO –214AA

English Chinese Chinese and English Japanese

Aug 2014

Revision 1

622 KB

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