WNM12N65/WNM12N65F 650V N-Channel MOSFET

PublishTime：2023-05-27

●Description
■The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
●Features
■650V@TJ=25°C
■Typ.RDS(on)=0.57Ω
■Low gate charge
■100% avalanche tested
■100% Rg tested

Brand of Product：	WILLSEMI
Part#：	WNM12N65 、 WNM12N65F 、 WNM12N65_3/T 、 WNM12N65F_3/T More Part#
Product Category：	N-Channel MOSFET 、 N-Channel enhancement MOS Field Effect Transistor More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220;TO-220-F
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Jan. 2017
Version Number：	Rev.1.1
Data Encoding：
Data Size：	1.8 MB

Data section preview(2pages)

- The full preview is over. If you want to read the whole 9 page document,please Sign in/Register -

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits