12N65 12A, 650V N-CHANNEL POWER MOSFET
■ The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
■These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
●Feature
■RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A
■Ultra low gate charge ( typical 42 nC )
■Low reverse transfer capacitance ( CRSS = typical 25 pF )
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness
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N-CHANNEL POWER MOSFET 、 N-Channel enhancement mode power field effect transistors (MOSFET) |
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Datasheet |
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Please see the document for details |
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TO-262;TO-263;TO-251;TO-252;TO-220F;TO-220 |
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English Chinese Chinese and English Japanese |
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2022/2/23 |
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561 KB |
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