Keysight Technologies B1500A Semiconductor Device Analyzer Ultra-Fast 1 μs NBTI Characterization Using the B1500A’s WGFMU Module
■Introduction
▲Reducing the time required to characterize the reliability of new process technologies continues to become more and more important. The use of new materials such as high-k gate dielectrics coupled with the push for ever-smaller device geometries make achieving this goal more difficult, since they present new reliability challenges that did not exist a few years ago. In particular, negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) induced threshold voltage (Vth) degradation in MOSFETs under high gate bias and high temperature is an area of critical concern for advanced semiconductor processes. Many NBTI studies have shown that measured Vth degradation is strongly dependent upon how the test is performed (such as the type of stress applied to the gate or the elapsed time between removal of the stress and the Vth measurement). This makes it important for any NBTI measurement hardware to be able generate various types of AC stress (in addition to DC stress) and for it to be able to make measurements within 1 μs after removal of the stress (to avoid dynamic recovery effects).
▲To achieve more accurate and realistic data there is also a strong desire to measure the Vth using an Id-Vg sweep rather than through a series of drain current (Id) sampling measurements at a single gate bias voltage. The characterization of dynamic NBTI recovery effects after stress removal requires that a series of sampling measurements from sub-microseconds to one thousand seconds or more be taken at logarithmically spaced intervals, for both Id spot and Id-Vg sweep measurements. In addition, extracting accurate lifetime estimates from measured Vth and Id shifts after a short stress period (~1000 seconds) requires a low measurement noise floor. These are challenging requirements, but the Keysight Technologies, Inc. B1500A Semiconductor Device Analyzer’s new waveform generator/fast measurement unit (WGFMU) module can meet all of these needs in a straightforward fashion. This application note will show how the B1500A’s WGFMU can provide solutions that meet the needs of ultra-fast NBTI measurement.
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Semiconductor Device Analyzer 、 WGFMU Module 、 waveform generator/fast measurement unit (WGFMU) |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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July 31, 2014 |
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5989-9963EN |
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1.8 MB |
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