N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE HIGH VOLTAGE SML40L57
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
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Datasheet |
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Please see the document for details |
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TO–264AA;TO–264 |
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English Chinese Chinese and English Japanese |
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2017/01/17 |
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53 KB |
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