New Gen 3 650V IGBTA Soft And Efficient Switch For Industrial Applications
Recent development of trench stop IGBTs has led to very performant devices. They present lower static and dynamic losses, thus increasing the efficiency of the systems they are applied, even at switching frequencies above 20 kHz. However, high performance comes together with some challenges. Some of them are related to the intrinsic behavior of the device. For instance,small and non-linear parasitic capacitances result in non-controllable switching speed. In addition, parasitic inductances of the IGBT package, combined with those from the printed circuit board(PCB), can generate persistent oscillations in both collector-to-emitter and gate-to-emitter voltage.Such application issues make modern IGBTs difficult to be handled, and limit their use.
The new family of trench stop IGBTs from ROHM Semiconductor, named Gen 3, is intended to offer an optimal compromise between performance and ease of use. Due to its fast but smooth switching behavior, Gen 3 IGBTs are easy to operate even with small values of external gate resistor.Consequently, it is possible to obtain high system efficiency with minimum effort in the PCB design and electromagnetic interference (EMI) filtering.
This application note introduces the technical features of Gen 3 IGBTs, as well as their benefits in industrial applications. As examples, a portable welding machine and a DC/AC inverter are used to compare the performance of Gen 3 with other IGBT devices available on the market.
RGTV60TS65 、 RGTV00TS6 、 RGTVX6TS65 、 RGTV60TS65D 、 RGTV00TS65D 、 RGTVX6TS65D 、 RGTV60TK65 、 RGTV00TK65 、 RGTV60TK65D 、 RGTV00TK65D 、 RGW60TS65 、 RGW60TK65 、 RGW80TK65 、 RGW00TK65 、 RGW80TS65 、 RGW00TS65 、 RGW60TS65D 、 RGW80TS65D 、 RGW00TS65D 、 RGW60TK65D 、 RGW80TK65D 、 RGW00TK65D 、 IGBT 、 RGW 、 RGTV 、 RGTH 、 RGCL 、 RGP 、 RGT 、 RGS 、 RGTH80TS65D |
|
[ Industrial Applications ][ portable welding machine ][ DC/AC inverter ] |
|
Application note & Design Guide |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-247N;TO-3PFM;TO-252;LPDS-262;TO-262;LPDL;TO-220NFM |
|
English Chinese Chinese and English Japanese |
|
2018.1 |
|
Rev.001 |
|
60AN089E |
|
2.8 MB |
- +1 Like
- Add to Favorites
Recommend
- Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles
- Notice of Integration of ROHM Three Sales Companies in China
- Continental acknowledges ROHM Semiconductor with the “Supplier of the Year 2022 Award“
- ROHM Online Distributor China | Sekorm
- ROHM‘s Nano Energy™ and LAPIS Technology‘s Charge Control IC Help Maxell Energy Harvesting-compatible Evaluation Kit
- ROHM SiC MOSFETs Solve Design Challenges for Leading Solar Energy Company Midnite Solar
- Ultra-Low IQ PMIC from ROHM Selected to Power NXP iMX8M Nano for High Performance Embedded Artists Industrial Control Board
- ROHM’s Product Longevity Program Enables Worry-free Adoption of ROHM Products
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.