SMS2001-C -2A, -20V, RDS(O ) 200mΩ P-Channel Enhancement Mode Power MOSFET

2022-09-06

●DESCRIPTION
■The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R-DS(ON) and gate charge for most of the small power switching and load switch applications.
The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved.
●FEATURES
■Advanced High Cell Density Trench Technology
■Super Low Gate Charge

SECOS

SMS2001-C

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Part#

trench P-Ch MOSFETsP-Channel Enhancement Mode Power MOSFET

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load switch ]

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Datasheet

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Please see the document for details

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SOT-23

English Chinese Chinese and English Japanese

07-Dec-2017

Rev. A

430 KB

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