HL***2300DNR* 20V/27mΩ@4.5V N-Channel MOSFET

2025-03-21
该文档介绍了HL***2300DNR*型号的N-Channel MOSFET(金属氧化物半导体场效应晶体管)的特性、应用、最大额定值、热特性以及电气特性。该MOSFET具有20V的最大漏源电压、5A的最大连续漏极电流和27mΩ的最大导通电阻(在4.5V栅极电压下)。它适用于笔记本电脑、手持式仪器和负载开关等应用,并具有改进的dv/dt能力。文档还提供了详细的电气参数,包括断态特性、导通特性和动态/开关特性。

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HL***2300DNR*

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N-Channel MOSFET

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笔记本电脑 ]手持式仪器 ]负载开关 ]

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Datasheet

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