SXG12N10D 100V N-SGT Enhancement Mode MOSFET

2025-03-21
SXG12N10D是一款采用先进SGT MOSFET技术的100V N-SGT增强型MOSFET。该器件具有低RDS(on)、低栅极电荷、快速开关和优异的雪崩特性,提供极低的开关损耗和优异的稳定性和均匀性。特别设计以提高鲁棒性,适用于逆变器等应用。

SXSEMI

SXG12N10D

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Part#

MOSFET

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逆变器等 ]

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Datasheet

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Please see the document for details

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TO-252-3L

English Chinese Chinese and English Japanese

3 MB

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