SXG100N10D

2025-03-21
SXG100N10D是一款采用先进技术制造的100V N-Channel增强型MOSFET。它具有出色的RDS(ON)、低栅极电荷和RDS(ON) < 8.0mΩ @ VGS=10V的特性,可在低至4.5V的栅极电压下运行。该器件适用于电池保护或开关应用。

SXSEMI

SXG100N10D

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MOSFET

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电池保护 ]隔离直流电机控制 ]同步整流 ]

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Datasheet

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TO-252-3L

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