SX55N10T 100V N-Channel Enhancement Mode MOSFET

2025-03-21
SX55N10T是一款采用先进沟槽技术的MOSFET,具有优异的RDS(ON)特性,适用于电池保护、负载开关和不间断电源等应用。该器件的VDS为100V,ID为55A,RDS(ON)在VGS=10V时小于21mΩ。它采用TO-263-3L封装。

SXSEMI

SX55N10T

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Part#

MOSFET

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电池保护 ]负载开关 ]不间断电源 ]

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Datasheet

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Please see the document for details

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TO-263-3L

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