SX15N10Y-L 100V N-Channel Enhancement Mode MOSFET

2025-03-21
SX15N10Y-L系列MOSFET采用先进的功率创新设计和硅工艺技术,实现了极低的导通电阻和快速开关性能。该系列器件适用于广泛的电源应用,提供高效能的解决方案。主要特性包括VDS = 100V,ID = 15A,RDS(ON) < 120mΩ @ VGS=10V。适用于电池保护、负载开关和不间断电源等应用。

SXSEMI

SX15N10Y-L

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MOSFET

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电池保护 ]负载开关 ]不间断电源 ]

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Datasheet

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TO-251-3L

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